Showing results 7 to 22 of 22
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Issue Date | Title | Author(s) |
13-May-2013 | Developing electronic devices capable of withstanding harsh radiation | Pastuovic, Z; Vittone, E; Siegele, R; Capan, I; Vizkelethy, G; Cohen, DD; Jakšić, M |
15-Oct-2011 | Focused ion beam fabrication and IBIC characterisation of a diamond detector with buried electrodes | Olivero, P; Forneris, J; Jakšić, M; Pastuovic, Z; Picollo, F; Skukan, N; Vittone, E |
1-Aug-2014 | Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon | Pastuovic, Z; Capan, I; Siegele, R; Jacimovic, R; Forneris, J; Cohen, DD; Vittone, E |
1-Jul-2019 | Heavy ion PIXE cross sections in Ti, Zn, Nb, Ru and Ta for 4.8–30.0 MeV oxygen and 3.0–12.0 MeV lithium beams | Siegele, R; Cohen, DD; Pastuovic, Z |
1-Nov-2019 | IBIC microscopy – the powerful tool for testing micron – sized sensitive volumes in segmented radiation detectors used in synchrotron microbeam radiation and hadron therapies | Pastuovic, Z; Davis, J; Tran, LT; Paino, JR; Dipuglia, A; James, B; Povoli, M; Kok, A; Perevertaylo, VL; Siegele, R; Prokopovich, DA; Lerch, MLF; Petasecca, M; Rosenfeld, AB; Cohen, DD |
1-Jul-2013 | Investigation of elemental changes in brain tissues following excitotoxic injury | Siegele, R; Howell, NR; Callaghan, PD; Pastuovic, Z |
1-Jul-2013 | Light and heavy ion beam analysis of thin biological sections | Lee, J; Siegele, R; Pastuovic, Z; Hackett, MJ; Hunt, NH; Grau, GE; Cohen, DD; Lay, PA |
15-Oct-2011 | Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottkey diode | Olivero, P; Forneris, J; Gamarra, P; Jakšić, M; Lo Giudice, A; Manfredotti, C; Pastuovic, Z; Skukan, N; Vittone, E |
1-Aug-2014 | A Monte carlo software for the 1-dimensional simulation of IBIC experiments | Forneris, J; Jakšić, M; Pastuovic, Z; Vittone, E |
1-Aug-2017 | The new confocal heavy ion microprobe beamline at ANSTO: the first microprobe resolution tests and applications for elemental imaging and analysis | Pastuovic, Z; Siegele, R; Cohen, DD; Mann, M; Ionescu, M; Button, D; Long, S |
28-Feb-2011 | Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation | Pastuovic, Z; Vittone, E; Capan, I; Jakšić, M |
1-Apr-2015 | Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam | Pastuovic, Z; Capan, I; Cohen, DD; Forneris, J; Iwamoto, N; Ohshima, T; Siegele, R; Hoshino, N; Tsuchida, H |
7-Jul-2014 | Radiation hardness of n-type SiC Schottky diodes | Pastuovic, Z; Vittone, E; Siegele, R; Ohshima, T; Iwamoto, N; Forneris, J; Cohen, DD; Capan, I |
1-Jan-2013 | Radiation hardness of single crystal CVD diamond detector tested with MeV energy ions | Zamboni, I; Pastuovic, Z; Jakšić, M |
15-Mar-2016 | SIRIUS - a new 6MV accelerator system for IBA and AMS at ANSTO | Pastuovic, Z; Button, D; Cohen, DD; Fink, D; Garton, D; Hotchkis, MAC; Ionescu, M; Long, S; Levchenko, VA; Mann, M; Siegele, R; Smith, AM; Wilcken, KM |
1-Apr-2016 | Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range | Capan, I; Pastuovic, Z; Siegele, R; Jacimovic, R |