Browsing by Author Tavendale, AJ
Showing results 1 to 13 of 13
| Issue Date | Title | Author(s) |
| Feb-1983 | An attempt to detect electrochemical doping of silicon with arsenic by Rutherford backscattering analysis | Tavendale, AJ; Lawson, EM |
| Apr-1973 | The behaviour of high purity semiconductor surface-barrier nuclear radiation detectors at low temperatures | Lawson, EM; Tavendale, AJ |
| Sep-1984 | Deep level transient conductance spectrometer for high resistivity semiconductors using a marginal oscillator detector. | Alexiev, D; Tavendale, AJ |
| Jan-1981 | Deep level transient spectroscopy of n-GaAs surface barrier diodes for nuclear radiation detection | Pearton, SJ; Alexiev, D; Tavendale, AJ; Williams, AA |
| Dec-1980 | Deep level transient spectroscopy of y-ray induced defects in germanium | Pearton, SJ; Williams, AA; Tavendale, AJ |
| Apr-1983 | Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium. | Tavendale, AJ; Pearton, SJ |
| Nov-1970 | A large volume, multi-element Ge(Li) spectrometer | Lawson, EM; Tavendale, AJ; Dawson, AC |
| Aug-1988 | Lithium compensation of GaAs. | Alexiev, D; Tavendale, AJ |
| 1982 | The nature of the Ev + 0.23 eV and Ev + 0.38 eV gamma-induced centres in Ge. | Pearton, SJ; Tavendale, AJ |
| Feb-1971 | The operation near liquid helium temperature of a gold-barrier hyper-pure germanium detector for gamma-rays | Lawson, EM; Tavendale, AJ |
| Nov-1970 | Restoration of lithium driftability in some vacuum-grown germanium crystals for gamma-ray detectors | Tavendale, AJ |
| Sep-1980 | Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature | Pearton, SJ; Williams, AA; Tavendale, AJ; Lawson, EM |
| Dec-1980 | Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications | Pearton, SJ; Tavendale, AJ; Williams, AA |
