Browsing by Author Vittone, E
Showing results 1 to 8 of 8
| Issue Date | Title | Author(s) |
| 1-Jan-2016 | Charge collection efficiency degradation induced by MeV ions in semiconductor devices: model and experiment | Vittone, E; Pastuovic, Z; Breese, M; Garcia Lopez, J; Jakšić, M; Raisanen, J; Siegele, R; Simon, A; Vizkelethy, G |
| 13-May-2013 | Developing electronic devices capable of withstanding harsh radiation | Pastuovic, Z; Vittone, E; Siegele, R; Capan, I; Vizkelethy, G; Cohen, DD; Jakšić, M |
| 15-Oct-2011 | Focused ion beam fabrication and IBIC characterisation of a diamond detector with buried electrodes | Olivero, P; Forneris, J; Jakšić, M; Pastuovic, Z; Picollo, F; Skukan, N; Vittone, E |
| 1-Aug-2014 | Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon | Pastuovic, Z; Capan, I; Siegele, R; Jacimovic, R; Forneris, J; Cohen, DD; Vittone, E |
| 15-Oct-2011 | Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottkey diode | Olivero, P; Forneris, J; Gamarra, P; Jakšić, M; Lo Giudice, A; Manfredotti, C; Pastuovic, Z; Skukan, N; Vittone, E |
| 1-Aug-2014 | A Monte carlo software for the 1-dimensional simulation of IBIC experiments | Forneris, J; Jakšić, M; Pastuovic, Z; Vittone, E |
| 28-Feb-2011 | Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation | Pastuovic, Z; Vittone, E; Capan, I; Jakšić, M |
| 7-Jul-2014 | Radiation hardness of n-type SiC Schottky diodes | Pastuovic, Z; Vittone, E; Siegele, R; Ohshima, T; Iwamoto, N; Forneris, J; Cohen, DD; Capan, I |
