Please use this identifier to cite or link to this item:
https://apo.ansto.gov.au/dspace/handle/10238/131| Title: | Lithium compensation of GaAs. |
| Authors: | Alexiev, D Tavendale, AJ |
| Keywords: | Semiconductor materials Spectroscopy Arsenides Spectroscopy Lithium Gallium Diffusion |
| Issue Date: | Aug-1988 |
| Publisher: | Australian Nuclear Science and Technology Organisation |
| Citation: | Alexieu, D., & Tavendale, A. (1988). Lithium compensation of GaAs (ANSTO/E-676). Lucas Heights, NSW: Australian Nuclear Science and Technology Organisation Lucas Heights Research Laboratories. |
| Abstract: | Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments the effect of Li diffusion on existing trap spectra defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made. |
| Gov't Doc #: | 311 |
| URI: | http://apo.ansto.gov.au/dspace/handle/10238/131 |
| ISBN: | 0642598908 0642598908 |
| ISSN: | 10307745 1030-7745 |
| Appears in Collections: | Scientific and Technical Reports |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ANSTO-E-676.pdf | 1.1 MB | Adobe PDF |  View/Open |
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