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|Title:||Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium.|
|Publisher:||Australian Atomic Energy Commission|
|Citation:||Tavendale, A. J., Pearton, S. J. (1983). Hydrogenation of deep-level hole-trapping centres associated with grain boundaries in germanium. (AAEC/E564). Lucas Heights, NSW: Australian Atomic Energy Commission.|
|Abstract:||Effects of the hydrogenation of deep level, hole-trapping centres associated with grain boundaries incorporated in diodes from n- and p- type germanium have been examined by deep level transient capacitance spectroscopy and measurement of reverse bias leakage current. Significant reductions in diode leakage current (by factors of 2 to 10 at 77 K) and suppression of deep level centres were observed following exposure to a low pressure (0.5 torr), radio-frequency-induced hydrogen plasma at 300oC for 2 hours; no reversal was observed after a subsequent vacuum anneal at the same temperature and time.|
|Gov't Doc #:||112|
|Appears in Collections:||Scientific and Technical Reports|
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