Please use this identifier to cite or link to this item:
https://apo.ansto.gov.au/dspace/handle/10238/184| Title: | Neutron transmutation doping of silicon for the production of radiation detectors |
| Authors: | Alexiev, D |
| Keywords: | Radiation detectors Silicon Transmutation Neutrons |
| Issue Date: | Nov-1987 |
| Publisher: | Australian Nuclear Science and Technology Organisation |
| Citation: | Alexiev, D. (1987). Neutron transmutation doping of silicon for the production of radiation detectors (ANSTO-E-668). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation. |
| Abstract: | P-type silicon was doped by neutron transmutation (NTD-Si) to produce high resistivity n-type silicon suitable for the production of surface barrier radiation detectors. Deep level transient spectroscopy (DLTS) analysis showed no remnant traps following annealing (850 deg C) of the NTD-Si in the presence of a phosphosilicate glass getter. Surface barrier radiation detectors constructed from this material showed no significant charge trapping and compare favourably with those constructed of float-zone (FZ) Si. |
| Gov't Doc #: | 124 |
| URI: | http://apo.ansto.gov.au/dspace/handle/10238/184 |
| ISBN: | 0642598711 0642598711 |
| ISSN: | 10307745 |
| Appears in Collections: | Scientific and Technical Reports |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ANSTO-E-668.pdf | 551.85 kB | Adobe PDF |  View/Open |
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