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|Title:||Graphene doping to enhance the flux pinning and supercurrent carrying ability of a magnesium diboride superconductor|
|Publisher:||Institute of Physics|
|Citation:||Xu, X., Dou, S. X., Wang, X. L., Kim, J. H., Stride, J. A., Choucair, M., Yeoh, W. K., Zheng, R. K., & Ringer, S. P. (2010). Graphene doping to enhance the flux pinning and supercurrent carrying ability of a magnesium diboride superconductor. Superconductor Science & Technology, 23(8), 085003. doi:10.1088/0953-2048/23/8/085003|
|Abstract:||The effect of graphene doping on the electromagnetic properties of MgB2 has been examined, in comparison with the case for undoped MgB2. It was found that graphene doping is more efficient than other forms of carbon doping for effecting improvement in the critical current density–field performance (Jc(B)), with little change in the transition temperature of MgB2. An optimal enhancement of Jc(B) was achieved for 3.7 at.% graphene doped MgB2, by a factor of 30 at 5 K and 10 T, as compared to undoped MgB2. It is found that spatial fluctuation in Tc is responsible for the flux pinning mechanism of graphene doped MgB2. © 2010, Institute of Physics|
|Gov't Doc #:||2161|
|Appears in Collections:||Journal Articles|
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