Please use this identifier to cite or link to this item:
|Title:||Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation|
|Publisher:||American Institute of Physics|
|Citation:||Pastuovic, Z., Vittone, E., Capan, I., & Jakšić, M. (2011). Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation. Applied Physics Letters, 98(9), 092101. doi:10.1063/1.3559000|
|Abstract:||We present ion beam induced charge (IBIC) measurements of the critical displacement damage dose D(d) values and modeling of the probability of divacancy trap production in p(+)-n-n(+) silicon diodes exposed to megaelectron volt energy ion beam irradiation. The normalized induced charge (Q(0)/Q) measured by He ion probe in tested silicon diodes irradiated by focused He, Li, O, and Cl ion beams with energies of about 0.3 MeV/u increases linearly with D(d) according to the modified radiation damage function and nonionizing energy loss (NIEL) theory. A simple IBIC model based on Gunn theorem showed clear dependence of the induced charge Q and corresponding equivalent damage factor Ked value on both a depth profile of charge created by ionizing particle (probe) and a depth distribution of stable defects created from primary defects produced by damaging ions. The average probability of the divacancy production (defined as the ratio of the final electrical active defect quantity and primary ion induced vacancy quantity for each impinging ion) of 0.18 (18%) was calculated by the IBIC modeling for all damaging ions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559000]|
|Gov't Doc #:||3761|
|Appears in Collections:||Journal Articles|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.