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Title: Preliminary investigations of the formation of laser-doped contacts on semiconductors
Authors: Lawson, EM
Keywords: Electric contacts
Laser radiation
P-type conductors
Doped materials
Issue Date: Oct-1981
Publisher: Australian Atomic Energy Commission
Citation: Lawson, E. M. (1981). Preliminary investigations of the formation of laser-doped contacts on semiconductors. (AAEC/E523). Lucas Heights, NSW: Australian Atomic Energy Commission.
Abstract: Contacts formed by laser doping single crystal semiconducting samples have been investigated by a variety of techniques. p- and n-type contacts have been formed on Ge, Si and GaAs by irradiating evaporated surface layers with a Q-switched ruby laser. The contact produced were thin and heavily doped. Techniques used to examine the contacts include Rutherford backscattering, scanning electron microscopy and sheet Hall and resistivity measurements.
Gov't Doc #: 688
ISBN: 0642597219
Appears in Collections:Scientific and Technical Reports

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